SI4463CDY-T1-GE3
| Part No | SI4463CDY-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET P-CHAN 2.5V SO8 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
19382
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.801 | |
| 10 | 0.785 | |
| 100 | 0.761 | |
| 1000 | 0.7369 | |
| 10000 | 0.7049 |
Specification
RoHSCompliant
MountSurface Mount
Height1.75 mm
Weight506.605978 mg
Fall Time11 ns
Lead FreeLead Free
PackagingCut Tape
Rise Time10 ns
REACH SVHCNo SVHC
Resistance8 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Case/PackageSO
Number of Pins8
Contact PlatingTin
Power Dissipation2.7 W
Threshold Voltage-600 mV
Number of Channels1
Number of Elements1
Turn-On Delay Time12 ns
Radiation HardeningNo
Turn-Off Delay Time70 ns
Element ConfigurationSingle
Max Power Dissipation5 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance6 mΩ
Gate to Source Voltage (Vgs)12 V
Continuous Drain Current (ID)-13.6 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)-20 V
Drain to Source Breakdown Voltage-20 V
