SI7120ADN-T1-GE3
| Part No | SI7120ADN-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 60V 6A 1212-8 PPAK |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
18265
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.616 | |
| 10 | 1.5837 | |
| 100 | 1.5352 | |
| 1000 | 1.4867 | |
| 10000 | 1.4221 |
Specification
RoHSCompliant
MountSurface Mount
Fall Time12 ns
Lead FreeLead Free
Rise Time12 ns
REACH SVHCNo SVHC
Rds On Max21 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Number of Pins8
Power Dissipation1.5 W
Threshold Voltage2.5 V
Number of Channels1
Number of Elements1
Turn-On Delay Time14 ns
Radiation HardeningNo
Turn-Off Delay Time50 ns
Element ConfigurationSingle
Max Power Dissipation3.8 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance21 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)9.5 A
Drain to Source Voltage (Vdss)60 V
Drain to Source Breakdown Voltage60 V
